Fundamental limitations in conventional transistors have
resulted in a tradeoff between perfromance and power dissipation in electronic
integrated circuits. Tunneling field effect transistors (TFET) that operate
based on band to band tunneling of carriers could replace conventional
transistors in the future since they can operate at low voltages leading to
significant power savings while simultaneously improving performance.
Researchers from Penn State, IQE Inc. and NIST will present a joint paper on
recent key developments in compound semiconductor based TFET device technology
for high speed and low voltage/low power applications at the International
Electron Devices Meeting (IEDM) to be held in Washington , DC from 9 to 11
December.