December 12, 2013

PENN STATE UNIVERSITY, IQE AND NIST TO JOINTLY PRESENT SUPER FAST, LOW POWER TUNNELING TRANSISTORS AT THE INTERNATIONAL ELECTRON DEVICE MEETING CONFERENCE IN WASHINGTON DC



Fundamental limitations in conventional transistors have resulted in a tradeoff between perfromance and power dissipation in electronic integrated circuits. Tunneling field effect transistors (TFET) that operate based on band to band tunneling of carriers could replace conventional transistors in the future since they can operate at low voltages leading to significant power savings while simultaneously improving performance. Researchers from Penn State, IQE Inc. and NIST will present a joint paper on recent key developments in compound semiconductor based TFET device technology for high speed and low voltage/low power applications at the International Electron Devices Meeting (IEDM) to be held in Washington , DC from 9 to 11 December.