A research collaboration consisting of IHP-Innovations for
High Performance Microelectronics in Germany and the Georgia Institute of
Technology has demonstrated the world's fastest silicon-based device to date.
The investigators operated a silicon-germanium (SiGe) transistor at 798
gigahertz (GHz) fMAX, exceeding the previous speed record for silicon-germanium
chips by about 200 GHz.
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Silicon-Germanium Chip Sets New Speed Record
A research collaboration consisting of IHP-Innovations for
High Performance Microelectronics in Germany and the Georgia Institute of
Technology has demonstrated the world's fastest silicon-based device to date.
The investigators operated a silicon-germanium (SiGe) transistor at 798
gigahertz (GHz) fMAX, exceeding the previous speed record for silicon-germanium
chips by about 200 GHz.