Berkeley Lab Researchers Create the First Fully 2D Field
Effect Transistors
Faster electronic device architectures are in the offing
with the unveiling of the world’s first fully two-dimensional field-effect
transistor (FET) by researchers with the Lawrence Berkeley National Laboratory
(Berkeley Lab). Unlike conventional FETs made from silicon, these 2D FETs
suffer no performance drop-off under high voltages and provide high electron
mobility, even when scaled to a monolayer in thickness.