July 18, 2012

Tailoring the graphene/silicon carbide interface for monolithic wafer-scale electronics




Tailoring the graphene/silicon carbide interface for monolithic wafer-scale electronics

S. Hertel, D. Waldmann, J. Jobst, A. Albert, M. Albrecht, S. Reshanov, A. Schöner, M. Krieger
& H.B. Weber

Published 17 July 2012

Graphene is an outstanding electronic material, predicted to have a role in post-silicon electronics. However, owing to the absence of an electronic bandgap, graphene switching devices with high on/off ratio are still lacking. Here in the search for a comprehensive concept for wafer-scale graphene electronics, we present a monolithic transistor that uses the entire material system epitaxial graphene on silicon carbide (0001). This system consists of the graphene layer with its vanishing energy gap, the underlying semiconductor and their common interface.

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