Tailoring
the graphene/silicon carbide interface for monolithic wafer-scale electronics
S. Hertel, D.
Waldmann, J. Jobst, A. Albert, M. Albrecht, S. Reshanov, A. Schöner, M. Krieger
& H.B.
Weber
Published
17 July 2012
Graphene is
an outstanding electronic material, predicted to have a role in post-silicon
electronics. However, owing to the absence of an electronic bandgap, graphene
switching devices with high on/off ratio are still lacking. Here in the search
for a comprehensive concept for wafer-scale graphene electronics, we present a
monolithic transistor that uses the entire material system epitaxial graphene
on silicon carbide (0001). This system consists of the graphene layer with its
vanishing energy gap, the underlying semiconductor and their common interface.
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