Rice University making reliable 3-D memories from silicon
oxide and graphene
Researchers at Rice University are designing transparent,
two-terminal, three-dimensional computer memories on flexible sheets that show
promise for electronics and sophisticated heads-up displays.
The technique based on the switching properties of silicon
oxide, a breakthrough discovery by Rice in 2008, was reported today in the
online journal Nature Communications.
The Rice team led by chemist James Tour and physicist
Douglas Natelson is making highly transparent, nonvolatile resistive memory
devices based on the revelation that silicon oxide itself can be a switch.