Thin Layer of Germanium May Replace Silicon in
Semiconductors
The same material that formed the first primitive
transistors more than 60 years ago can be modified in a new way to advance
future electronics, according to a new study.
Chemists at The Ohio State University have developed the
technology for making a one-atom-thick sheet of germanium, and found that it
conducts electrons more than ten times faster than silicon and five times
faster than conventional germanium.