(June 20, 2015) A
quantum mechanical transport phenomenon demonstrated for the first time in
synthetic, atomically-thin layered material at room temperature could lead to
novel nanoelectronic circuits and devices, according to researchers at Penn
State and three other U.S. and international universities.
The quantum transport effect, called negative differential
resistance (NDR), was observed when a voltage was applied to structures made of
one-atom-thick layers of several layered materials known as van der Waals
materials. The three-part structures consist of a base of graphene followed by
atomic layers of either molybdenum disulfide (MoS2), molybdenum diselenide
(MoSe2), or tungsten diselenide (WSe2).
NDR is a phenomenon in which the wave nature of electrons
allows them to tunnel through any material with varying resistance. The
potential of NDR lies in low voltage electronic circuits that could be operated
at high frequency.