Iron-dotted boron
nitride nanotubes, made in Yoke Khin Yaps� lab at Michigan
Tech,
could make for
better wearable tech because of their flexibility and electronic behaviors.
(February 6, 2016) The
road to more versatile wearable technology is dotted with iron. Specifically,
quantum dots of iron arranged on boron nitride nanotubes (BNNTs). The new
material is the subject of a study published in Scientific Reports in February,
led by Yoke Khin Yap, a professor of physics at Michigan Technological
University.
Yap says the iron-studded BNNTs are pushing the boundaries
of electronics hardware. The transistors modulating electron flow need an
upgrade.
“Look beyond semiconductors,” he says, explaining that
materials like silicon semiconductors tend to overheat, can only get so small
and leak electric current. The key to revamping the fundamental base of
transistors is creating a series of stepping-stones.
Quantum Dots
The nanotubes are the mainframe of this new material. BNNTs
are great insulators and terrible at conducting electricity. While at first
that seems like an odd choice for electronics, the insulating effect of BNNTs
is crucial to prevent current leakage and overheating. Additionally, electron
flow will only occur across the metal dots on the BNNTs.
In past research, Yap and his team used gold for quantum
dots, placed along a BNNT in a tidy line. With enough energy potential, the
electrons are repelled by the insulating BNNT and hopscotch from gold dot to
gold dot. This electron movement is called quantum tunneling.
“Imagine this as a river, and there’s no bridge; it’s too
big to hop over,” Yap says. “Now, picture having stepping stones across the
river—you can cross over, but only when you have enough energy to do so.”